A method for fabricating a recess pattern in a semiconductor device includes forming a photoresist layer over a substrate including active regions, performing a first photo-exposure process on the photoresist layer using a photo mask including repeatedly formed line structures and spaces, performing a second photo-exposure process on the photoresist layer using a photo mask exposing the active regions, performing a developing process on regions of the photoresist layer whereon both the first and second photo-exposure processes are performed, and etching the substrate to form recess patterns using the remaining photoresist layer.