Invention Grant
- Patent Title: Method for making an anti-reflection film of a solar cell
- Patent Title (中): 制造太阳能电池防反射膜的方法
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Application No.: US12007156Application Date: 2008-01-07
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Publication No.: US07863078B2Publication Date: 2011-01-04
- Inventor: Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
- Applicant: Tsun-Neng Yang , Shan-Ming Lan , Chin-Chen Chiang , Wei-Yang Ma , Chien-Te Ku , Yu-Hsiang Huang
- Applicant Address: TW Taoyuan
- Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p− type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p− type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.
Public/Granted literature
- US20100279453A1 Method for making an anti-reflection film of a solar cell Public/Granted day:2010-11-04
Information query
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