Invention Grant
- Patent Title: Contact fabrication of emitter wrap-through back contact silicon solar cells
- Patent Title (中): 接头制造发射体包裹反接触硅太阳能电池
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Application No.: US12553803Application Date: 2009-09-03
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Publication No.: US07863084B2Publication Date: 2011-01-04
- Inventor: Peter Hacke , James M. Gee
- Applicant: Peter Hacke , James M. Gee
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc
- Current Assignee: Applied Materials, Inc
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP.
- Main IPC: H01L21/38
- IPC: H01L21/38

Abstract:
Back contact solar cells including rear surface structures and methods for making same. The rear surface has small contact areas through at least one dielectric layer, including but not limited to a passivation layer, a nitride layer, a diffusion barrier, and/or a metallization barrier. The dielectric layer is preferably screen printed. Large grid areas overlay the dielectric layer. The methods provide for increasing efficiency by minimizing p-type contact areas and maximizing n-type doped regions on the rear surface of a p-type substrate.
Public/Granted literature
- US20090320922A1 Contact Fabrication of Emitter Wrap-Through Back Contact Silicon Solar Cells Public/Granted day:2009-12-31
Information query
IPC分类: