Invention Grant
- Patent Title: Semiconductor device including covering a semiconductor with a molding compound and forming a through hole in the molding compound
- Patent Title (中): 半导体装置包括用模塑料覆盖半导体并在模塑料中形成通孔
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Application No.: US11749293Application Date: 2007-05-16
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Publication No.: US07863088B2Publication Date: 2011-01-04
- Inventor: Markus Brunnbauer , Jens Pohl , Rainer Steiner
- Applicant: Markus Brunnbauer , Jens Pohl , Rainer Steiner
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/48 ; H01L21/50
Abstract:
A semiconductor device and method is disclosed. In one embodiment, the method includes placing a first semiconductor over an electrically conductive carrier. The first semiconductor is covered with a molding compound. A through hole is formed in the molding compound. A first material is deposited in the through hole.
Public/Granted literature
- US20080284035A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-11-20
Information query
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