Invention Grant
- Patent Title: Thermally improved semiconductor QFN/SON package
- Patent Title (中): 热改性半导体QFN / SON封装
-
Application No.: US12255944Application Date: 2008-10-22
-
Publication No.: US07863103B2Publication Date: 2011-01-04
- Inventor: Donald C Abbott
- Applicant: Donald C Abbott
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Yingsheng Tung; Wade J. Brady III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor device without cantilevered leads uses conductive wires (120) to connect the chip terminals to the leads (110), and a package compound (140) to encapsulate the chip surface (101a) with the terminals, the wires, and the lead surfaces with the attached wires. The chip surface (101b) opposite the terminals together with portions (103) of the chip sidewalls protrude from the package, allowing an unimpeded thermal contact of the protruding chip surface to a substrate (201) to optimize the thermal flux from the chip to the substrate. Solder bodies (250) attached to the compound-free lead surfaces (113b) can be connected to the substrate so that the solder bodies are as elongated as the protruding chip height, facilitating the void-free distribution of an underfill compound into the space between chip and substrate, and improving the absorption of thermomechanical stresses during device operation.
Public/Granted literature
- US20100096734A1 THERMALLY IMPROVED SEMICONDUCTOR QFN/SON PACKAGE Public/Granted day:2010-04-22
Information query
IPC分类: