Invention Grant
- Patent Title: Method for fabricating Schottky barrier tunnel transistor
- Patent Title (中): 制造肖特基势垒隧道晶体管的方法
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Application No.: US11800914Application Date: 2007-05-08
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Publication No.: US07863121B2Publication Date: 2011-01-04
- Inventor: Moon-Gyu Jang , Yark-Yeon Kim , Chel-Jong Choi , Myung-Sim Jun , Tae-Youb Kim , Seong-Jae Lee
- Applicant: Moon-Gyu Jang , Yark-Yeon Kim , Chel-Jong Choi , Myung-Sim Jun , Tae-Youb Kim , Seong-Jae Lee
- Applicant Address: KR Daejon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejon
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Priority: KR10-2006-0118986 20061129
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode.
Public/Granted literature
- US20080121868A1 Schottky barrier tunnel transistor and method for fabricating the same Public/Granted day:2008-05-29
Information query
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