Invention Grant
US07863123B2 Direct contact between high-κ/metal gate and wiring process flow
有权
高金属栅极/接线工艺流程之间的直接接触
- Patent Title: Direct contact between high-κ/metal gate and wiring process flow
- Patent Title (中): 高金属栅极/接线工艺流程之间的直接接触
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Application No.: US12355953Application Date: 2009-01-19
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Publication No.: US07863123B2Publication Date: 2011-01-04
- Inventor: Huiming Bu , Michael P. Chudzik , Ricardo A. Donaton , Naim Moumen , Hongwen Yan
- Applicant: Huiming Bu , Michael P. Chudzik , Ricardo A. Donaton , Naim Moumen , Hongwen Yan
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Whitman, Curtis, Christofferson & Cook, P.C.
- Agent Joseph P. Abate
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A low resistance contact is formed to a metal gate or a transistor including a High-κ gate dielectric in a high integration density integrated circuit by applying a liner over a gate stack, applying a fill material between the gate stacks, planarizing the fill material to support high-resolution lithography, etching the fill material and the liner selectively to each other to form vias and filling the vias with a metal, metal alloy or conductive metal compound such as titanium nitride.
Public/Granted literature
- US20100181630A1 DIRECT CONTACT BETWEEN HIGH-K/METAL GATE AND WIRING PROCESS FLOW Public/Granted day:2010-07-22
Information query
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