Manufacturing method of semiconductor device

Invention Grant

US07863127B2 Manufacturing method of semiconductor device 失效

Title translation: 半导体器件的制造方法

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Patent Title: Manufacturing method of semiconductor device
Patent Title (中): 半导体器件的制造方法
Application No.: US12470718

Application Date: 2009-05-22
Publication No.: US07863127B2

Publication Date: 2011-01-04
Inventor: Nobuyuki Mise , Tetsu Morooka
Applicant: Nobuyuki Mise , Tetsu Morooka
Applicant Address: JP Kawasaki-shi
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kawasaki-shi
Agency: Miles & Stockbridge P.C.
Priority: JP2008-135703 20080523
Main IPC: H01L21/8238
IPC: H01L21/8238

Manufacturing method of semiconductor device

Abstract:

After forming a first gate electrode and a second gate electrode on a semiconductor substrate, a silicon oxide film is formed to cover an n-channel MISFET forming region, and a p-channel MISFET forming region is exposed. Subsequently, after a first element supply film made of, for example, an aluminum oxide film is formed on the whole surface of the semiconductor substrate, a heat treatment is performed. By this means, a high-concentration HfAlO film and a low-concentration HfAlO film are formed by diffusing aluminum into the first insulating film just below the second gate electrode. Thereafter, by using a magnesium oxide film as a second element supply film, magnesium is diffused into the first insulating film just below the first gate electrode, thereby forming a high-concentration HfMgO film and a low-concentration HfMgO film.

Abstract(Chinese):

在半导体衬底上形成第一栅电极和第二栅电极之后，形成氧化硅膜以覆盖n沟道MISFET形成区域，露出p沟道MISFET形成区域。随后，在半导体衬底的整个表面上形成由例如氧化铝膜制成的第一元件供给膜之后，进行热处理。通过这种方式，通过将铝扩散到刚好在第二栅电极正下方的第一绝缘膜中，形成高浓度HfAlO膜和低浓度HfAlO膜。此后，通过使用氧化镁膜作为第二元件供给膜，镁在第一栅电极正下方扩散到第一绝缘膜中，从而形成高浓度HfMgO膜和低浓度HfMgO膜。

Public/Granted literature

US20090291538A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2009-11-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS