Methods of forming nano line structures in microelectronic devices

Invention Grant

US07863138B2 Methods of forming nano line structures in microelectronic devices 失效

Title translation: 在微电子器件中形成纳米线结构的方法

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Patent Title: Methods of forming nano line structures in microelectronic devices
Patent Title (中): 在微电子器件中形成纳米线结构的方法
Application No.: US11853313

Application Date: 2007-09-11
Publication No.: US07863138B2

Publication Date: 2011-01-04
Inventor: ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
Applicant: ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
Applicant Address: KR
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR
Agency: Myers Bigel Sibley & Sajovec, P.A.
Priority: KR10-2006-0112875 20061115
Main IPC: H01L21/8236
IPC: H01L21/8236

Methods of forming nano line structures in microelectronic devices

Abstract:

A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.

Abstract(Chinese):

形成微电子器件的方法包括在衬底上形成具有相对侧壁及其表面的沟槽结构，以限定纳米线布置区域。纳米线排列区域具有预定宽度和大于宽度的预定长度。在纳米线布置区域中形成至少一条纳米线，其基本上沿着其长度延伸并耦合到凹槽结构的表面以限定纳米线结构。还讨论了相关设备。

Public/Granted literature

US20080169531A1 METHODS OF FORMING NANO LINE STRUCTURES IN MICROELECTRONIC DEVICES AND RELATED DEVICES Public/Granted day:2008-07-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8236	........增强型和耗尽型晶体管的组合