Invention Grant
- Patent Title: Wafer processing method including forming blocking and dividing grooves
- Patent Title (中): 晶片加工方法包括形成阻挡和分隔槽
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Application No.: US12320354Application Date: 2009-01-23
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Publication No.: US07863160B2Publication Date: 2011-01-04
- Inventor: Kentaro Iizuka
- Applicant: Kentaro Iizuka
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2008-017595 20080129
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/78 ; H01L21/301
Abstract:
A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street and also to form a dividing groove along the blocking groove formed by the first trip blocking groove step while moving the chuck table in a second direction in the processing-feed direction.
Public/Granted literature
- US20090191693A1 Wafer processing method Public/Granted day:2009-07-30
Information query
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