Invention Grant
- Patent Title: Method of growing GaN using CVD and HVPE
- Patent Title (中): 使用CVD和HVPE生长GaN的方法
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Application No.: US11808931Application Date: 2007-06-13
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Publication No.: US07863164B2Publication Date: 2011-01-04
- Inventor: Mitch M. C. Chou , Wen-Ching Hsu
- Applicant: Mitch M. C. Chou , Wen-Ching Hsu
- Applicant Address: TW Kaohsiung TW Hsinchu
- Assignee: Natioal Sun Yat-Sen University,Sino American Silicon Products Inc.
- Current Assignee: Natioal Sun Yat-Sen University,Sino American Silicon Products Inc.
- Current Assignee Address: TW Kaohsiung TW Hsinchu
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Priority: TW096110014 20070322
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L31/20
Abstract:
A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.
Public/Granted literature
- US20100248461A1 Method of growing GaN using CVD and HVPE Public/Granted day:2010-09-30
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