Invention Grant
- Patent Title: Method of manufacturing group III nitride crystal
- Patent Title (中): 制备III族氮化物晶体的方法
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Application No.: US12370606Application Date: 2009-02-13
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Publication No.: US07863167B2Publication Date: 2011-01-04
- Inventor: Fumitaka Sato , Seiji Nakahata
- Applicant: Fumitaka Sato , Seiji Nakahata
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agent James W. Judge
- Priority: JP2008-033475 20080214
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face (10m) of a III-nitride substrate (10), III-nitride crystal (20) at least either whose constituent-atom type and ratios, or whose dopant type and concentration, differ from those of the III-nitride substrate (10); and a step of removing the III-nitride substrate (10) by vapor-phase etching.
Public/Granted literature
- US20090209091A1 Method of Manufacturing Group III Nitride Crystal Public/Granted day:2009-08-20
Information query
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