Invention Grant
US07863170B2 Semiconductor body comprising a transistor structure and method for producing a transistor structure
有权
半导体本体包括晶体管结构和用于制造晶体管结构的方法
- Patent Title: Semiconductor body comprising a transistor structure and method for producing a transistor structure
- Patent Title (中): 半导体本体包括晶体管结构和用于制造晶体管结构的方法
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Application No.: US11687187Application Date: 2007-03-16
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Publication No.: US07863170B2Publication Date: 2011-01-04
- Inventor: Georg Röhrer , Bernard Löffler , Jochen Kraft
- Applicant: Georg Röhrer , Bernard Löffler , Jochen Kraft
- Applicant Address: AT Unterpremstätten
- Assignee: Austriamicrosystems AG
- Current Assignee: Austriamicrosystems AG
- Current Assignee Address: AT Unterpremstätten
- Agency: Fish & Richardson P.C.
- Priority: DE102006012447 20060317
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A semiconductor body includes a substrate, a buried zone having a first conductivity type that is formed in the substrate, a first zone having the first conductivity type that is above the buried zone, a second zone having a second conductivity type that is different from the first conductivity type and above the first zone, and a third zone having the first conductivity type that is above the second zone. The buried zone includes first and second implantation regions that are formed via first and second implantations that are performed using a mask. The buried zone, the first zone, the second zone and the third zone are parts of a first transistor structure.
Public/Granted literature
- US20070224748A1 SEMICONDUCTOR BODY COMPRISING A TRANSISTOR STRUCTURE AND METHOD FOR PRODUCING A TRANSISTOR STRUCTURE Public/Granted day:2007-09-27
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