Invention Grant
- Patent Title: Fuse in a semiconductor device and method for fabricating the same
- Patent Title (中): 半导体器件中的保险丝及其制造方法
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Application No.: US12341954Application Date: 2008-12-22
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Publication No.: US07863177B2Publication Date: 2011-01-04
- Inventor: Jeong Soo Kim , Won Ho Shin
- Applicant: Jeong Soo Kim , Won Ho Shin
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2008-0103760 20081022
- Main IPC: H01L21/768
- IPC: H01L21/768
Abstract:
The present invention relates to a fuse in a semiconductor device and method for fabricating the same. An oxide film is formed on sidewalls of a barrier metal layer in a bottom portion of a fuse pattern, thereby preventing the barrier metal layer from being exposed. As a result, the oxidation of the barrier metal layer is inhibited to improve characteristics of the device.
Public/Granted literature
- US20100096722A1 Fuse in a Semiconductor Device and Method for Fabricating the Same Public/Granted day:2010-04-22
Information query
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