Method for manufacturing a GaN based optical device

Invention Grant

US07863178B2 Method for manufacturing a GaN based optical device 失效

Title translation: GaN基光学器件的制造方法

Please log in to see more content

Patent Title: Method for manufacturing a GaN based optical device
Patent Title (中): GaN基光学器件的制造方法
Application No.: US10542485

Application Date: 2004-08-21
Publication No.: US07863178B2

Publication Date: 2011-01-04
Inventor: Tae-Kyung Yoo , Joong Seo Park , Eun Hyun Park
Applicant: Tae-Kyung Yoo , Joong Seo Park , Eun Hyun Park
Applicant Address: KR Koomi KR Gyunggi-do
Assignee: Epivalley Co., Ltd.,Samsung LED Co., Ltd.
Current Assignee: Epivalley Co., Ltd.,Samsung LED Co., Ltd.
Current Assignee Address: KR Koomi KR Gyunggi-do
Agency: Husch Blackwell LLP
Priority: KR10-2003-0061551 20030903; KR10-2004-0021399 20040330
International Application: PCT/KR2004/002113 WO 20040821
International Announcement: WO2005/022655 WO 20050310
Main IPC: H01L21/3205
IPC: H01L21/3205

Method for manufacturing a GaN based optical device

Abstract:

The present invention relates to an AlGaInN based optical device fabricated by a new p-type AlGaInN:Mg growth method and method for manufacturing the same, including a p-type nitride semiconductor layer that is grown using both NH3 and a hydrazine based source as a nitrogen precursor, thereby an additional subsequent annealing process for extracting hydrogen is not necessary and thus the process is simple and an active layer can be prevented from being thermally damaged by subsequent annealing.

Abstract(Chinese):

本发明涉及一种通过新的p型AlGaInN：Mg生长方法制造的AlGaInN基光学器件及其制造方法，包括使用NH 3和肼基源生长的p型氮化物半导体层作为氮前体，因此不需要附加的用于提取氢的退火方法，因此该方法简单，并且可以防止活性层被随后的退火热损伤。

Public/Granted literature

US20060138446A1 Algainn based optical device and fabrication method thereof Public/Granted day:2006-06-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）