Invention Grant
US07863197B2 Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
有权
形成用于电荷载流子迁移率改变的横截面沙漏形通道区域的方法
- Patent Title: Method of forming a cross-section hourglass shaped channel region for charge carrier mobility modification
- Patent Title (中): 形成用于电荷载流子迁移率改变的横截面沙漏形通道区域的方法
-
Application No.: US11306721Application Date: 2006-01-09
-
Publication No.: US07863197B2Publication Date: 2011-01-04
- Inventor: Huajie Chen , Dureseti Chidambarrao , Judson R. Holt , Qiqing C. Ouyang , Siddhartha Panda
- Applicant: Huajie Chen , Dureseti Chidambarrao , Judson R. Holt , Qiqing C. Ouyang , Siddhartha Panda
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/00
Abstract:
A method for fabricating the semiconductor structure include a semiconductor substrate having a cross-section hourglass shaped channel region. A stress imparting layer is located adjacent the channel region. The hourglass shape may provide for enhanced vertical tensile stress within the channel region when it is longitudinally compressive stressed by the stress imparting layer.
Public/Granted literature
- US20080258180A1 CROSS-SECTION HOURGLASS SHAPED CHANNEL REGION FOR CHARGE CARRIER MOBILITY MODIFICATION Public/Granted day:2008-10-23
Information query
IPC分类:
