中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07863200B2 Process of vapor depositing glass layers for wafer-level hermetic encapsulation of electronic modules 有权
气相沉积玻璃层的方法用于电子模块的晶片级气密封装

  • Patent Title: Process of vapor depositing glass layers for wafer-level hermetic encapsulation of electronic modules
  • Patent Title (中): 气相沉积玻璃层的方法用于电子模块的晶片级气密封装
  • Application No.: US10511566
    Application Date: 2003-04-15
  • Publication No.: US07863200B2
    Publication Date: 2011-01-04
  • Inventor: Jürgen Leib , Dietrich Mund
  • Applicant: Jürgen Leib , Dietrich Mund
  • Applicant Address: DE Mainz
  • Assignee: Schott AG
  • Current Assignee: Schott AG
  • Current Assignee Address: DE Mainz
  • Agency: Ohlandt, Greeley, Ruggiero & Perle, LLP
  • Priority: DE20205830 20020415; DE10222609 20020523; DE10222958 20020523; DE10222964U 20020523; DE10252787U 20021113; DE10301559 20030116
  • International Application: PCT/EP03/03882 WO 20030415
  • International Announcement: WO03/087424 WO 20031023
  • Main IPC: H01L21/316
  • IPC: H01L21/316 ;  H01L21/56
Process of vapor depositing glass layers for wafer-level hermetic encapsulation of electronic modules
Abstract:
A process to encapsulate electronic modules in a manner which is substantially resistant to water diffusion yet is carried out at moderate temperatures below 300° C., preferably below 150° C. is provided. The process forms a housing for electronic modules, in particular sensors, integrated circuits and optoelectronic components. The process includes the steps of: providing a substrate, of which at least a first substrate side is to be encapsulated; providing a vapor-deposition glass source; arranging the first substrate side in such a manner with respect to the vapor-deposition glass source that the first substrate side can be vapor-coated; and vapor-coating the first substrate side with a glass layer.
Abstract(Chinese):

以基本上耐水扩散的方式封装电子模块的方法是在温度低于300℃，优选低于150℃的温度下进行的。 该过程形成用于电子模块的壳体，特别是传感器，集成电路和光电子部件。 该方法包括以下步骤：提供至少第一衬底侧被封装的衬底; 提供气相沉积玻璃源; 以相对于气相沉积玻璃源的方式布置第一衬底侧，第一衬底侧可以被蒸镀; 并用玻璃层对第一基板侧进行蒸镀。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02 .半导体器件或其部件的制造或处理
H01L21/04 ..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18 ...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30 ....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31 .....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/314 ......无机层（H01L21/3105，H01L21/32优先）
H01L21/316 .......由氧化物或玻璃状氧化物或以氧化物为基础的玻璃组成的无机层
Patent Agency Ranking
0/0