Invention Grant
- Patent Title: Interfacing two insulation parts in high voltage environment
- Patent Title (中): 在高压环境下接合两个绝缘部件
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Application No.: US11838360Application Date: 2007-08-14
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Publication No.: US07863520B2Publication Date: 2011-01-04
- Inventor: Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
- Applicant: Russell J. Low , Kasegn D. Tekletsadik , Anthony Renau , Piotr R. Lubicki , D. Jeffrey Lischer , Steve Krause , Eric Hermanson , Doug E. May
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01R4/02
- IPC: H01R4/02
Abstract:
Methods of interfacing parts in a high voltage environment and related structures are disclosed. A method comprises: providing an insulation medium between a first part and a second part in a high voltage environment; and interfacing the first part and the second part by compressing the first part and the second part against the insulation medium.
Public/Granted literature
- US20090047801A1 INTERFACING TWO INSULATION PARTS IN HIGH VOLTAGE ENVIRONMENT Public/Granted day:2009-02-19
Information query
