Invention Grant
- Patent Title: High performance chip carrier substrate
- Patent Title (中): 高性能芯片载体基板
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Application No.: US12186767Application Date: 2008-08-06
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Publication No.: US07863526B2Publication Date: 2011-01-04
- Inventor: Jean Audet , Irving Memis
- Applicant: Jean Audet , Irving Memis
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent John A. Jordan
- Main IPC: H05K1/16
- IPC: H05K1/16

Abstract:
A multilayer chip carrier with increased space for power distribution PTHs and reduced power-related noise. In a multilayer chip carrier with two signal redistribution fanout layers, in addition to signal escape from near-edge signal pads at the first fanout layer, remaining signal pads are moved closer to the edge of the chip footprint. At the voltage layer below the first fanout layer, the remaining signal pads are moved again, closer to the edge of the chip footprint. In the second fanout layer, below the voltage layer, the remaining signal pads escape. The region where signal pads are moved provides increased space for power PTHs.
Public/Granted literature
- US20080308923A1 HIGH PERFORMANCE CHIP CARRIER SUBSTRATE Public/Granted day:2008-12-18
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