Invention Grant
- Patent Title: Far ultraviolet with high luminance emitting high-purity hexagonal boron nitride monocrystalline powder and method of manufacturing the same
- Patent Title (中): 具有高亮度发射高纯度六方氮化硼单晶粉末的远紫外线及其制造方法
-
Application No.: US11988033Application Date: 2006-07-03
-
Publication No.: US07863554B2Publication Date: 2011-01-04
- Inventor: Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
- Applicant: Kenji Watanabe , Takashi Taniguchi , Hisao Kanda
- Applicant Address: JP Tsukuba-Shi, Ibaraki
- Assignee: National Institute for Materials Science
- Current Assignee: National Institute for Materials Science
- Current Assignee Address: JP Tsukuba-Shi, Ibaraki
- Agent Manabu Kanesaka
- Priority: JP2005-193358 20050701
- International Application: PCT/JP2006/313632 WO 20060703
- International Announcement: WO2007/004730 WO 20070111
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
While high-purity hexagonal boron nitride monocrystal (hBN) obtained by way of a high temperature/high-pressure treatment in the presence of a high-purity solvent has excellent properties in terms of far-UV luminescence characteristics, it has drawbacks including that it can be easily adversely affected by mechanical vibrations and impetus, that monocrystal shows a poor morphological retentiveness and that the luminescence characteristics fluctuate to shift the selected and set wavelength. The present invention can overcome the drawbacks of being easily affected by vibrations and showing a poor morphological retentiveness by grinding down the monocrystal obtained by a solvent/refining process into powder and applying the powder to a light emitting surface. Thus, the present invention provides crystal powder to be used for a far-UV luminescence device showing excellent luminescence characteristics that are stable and do not fluctuate.
Public/Granted literature
Information query
IPC分类: