Invention Grant
US07863595B2 Reproducible resistance variable insulating memory devices having a shaped bottom electrode
有权
具有成形底部电极的可复制电阻可变绝缘存储器件
- Patent Title: Reproducible resistance variable insulating memory devices having a shaped bottom electrode
- Patent Title (中): 具有成形底部电极的可复制电阻可变绝缘存储器件
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Application No.: US12407510Application Date: 2009-03-19
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Publication No.: US07863595B2Publication Date: 2011-01-04
- Inventor: Jun Liu
- Applicant: Jun Liu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom electrode. The arrangement of electrodes and the structure of the memory element makes it possible to create conduction paths with stable, consistent and reproducible switching and memory properties in the memory device.
Public/Granted literature
- US20090179188A1 REPRODUCIBLE RESISTANCE VARIABLE INSULATING MEMORY DEVICES HAVING A SHAPED BOTTOM ELECTRODE Public/Granted day:2009-07-16
Information query
IPC分类:
