Invention Grant
- Patent Title: Light emitting diode
- Patent Title (中): 发光二极管
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Application No.: US12203762Application Date: 2008-09-03
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Publication No.: US07863599B2Publication Date: 2011-01-04
- Inventor: Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
- Applicant: Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2007-0108686 20071029
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.
Public/Granted literature
- US20090108250A1 LIGHT EMITTING DIODE Public/Granted day:2009-04-30
Information query
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