Invention Grant
- Patent Title: Semiconductor device and a method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12427139Application Date: 2009-04-21
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Publication No.: US07863619B2Publication Date: 2011-01-04
- Inventor: Yasuhiko Takemura , Satoshi Teramoto
- Applicant: Yasuhiko Takemura , Satoshi Teramoto
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP5-269780 19931001; JP6-191020 19940721
- Main IPC: H01L29/10
- IPC: H01L29/10
Abstract:
A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
Public/Granted literature
- US20090200611A1 SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-08-13
Information query
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