Invention Grant
US07863634B2 LED device with re-emitting semiconductor construction and reflector
有权
LED器件具有重新发射半导体结构和反射器
- Patent Title: LED device with re-emitting semiconductor construction and reflector
- Patent Title (中): LED器件具有重新发射半导体结构和反射器
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Application No.: US11761148Application Date: 2007-06-11
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Publication No.: US07863634B2Publication Date: 2011-01-04
- Inventor: Michael A. Haase
- Applicant: Michael A. Haase
- Applicant Address: US MN St. Paul
- Assignee: 3M Innovative Properties Company
- Current Assignee: 3M Innovative Properties Company
- Current Assignee Address: US MN St. Paul
- Agent Kristofor L. Storvick
- Main IPC: H01L29/22
- IPC: H01L29/22

Abstract:
Briefly, the present disclosure provides a device comprising: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction which comprises a potential well not located within a pn junction; and c) a reflector positioned to reflect light emitted from the LED onto the re-emitting semiconductor construction. Alternately, the device comprises: a) an LED capable of emitting light at a first wavelength; b) a re-emitting semiconductor construction capable of emitting light at a second wavelength which comprises at least one potential well not located within a pn junction; and c) a reflector which transmits light at said first wavelength and reflects at least a portion of light at said second wavelength. Alternately, the device comprises a semiconductor unit comprising a first potential well located within a pn junction which comprises a LED capable of emitting light at a first wavelength, and a second potential well not located within a pn junction which comprises a re-emitting semiconductor construction.
Public/Granted literature
- US20070284592A1 LED DEVICE WITH RE-EMITTING SEMICONDUCTOR CONSTRUCTION AND REFLECTOR Public/Granted day:2007-12-13
Information query
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