Invention Grant
- Patent Title: Semiconductor light emitting element, method for manufacturing the same, and light emitting device
- Patent Title (中): 半导体发光元件及其制造方法以及发光元件
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Application No.: US12037358Application Date: 2008-02-26
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Publication No.: US07863637B2Publication Date: 2011-01-04
- Inventor: Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- Applicant: Hajime Nago , Koichi Tachibana , Kotaro Zaima , Shinji Saito , Shinya Nunoue , Toshiyuki Oka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-078719 20070326
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion.
Public/Granted literature
- US20080237569A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE Public/Granted day:2008-10-02
Information query
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