Invention Grant
US07863644B1 Bipolar transistor and method of forming the bipolar transistor with a backside contact
有权
双极晶体管和形成具有背面接触的双极晶体管的方法
- Patent Title: Bipolar transistor and method of forming the bipolar transistor with a backside contact
- Patent Title (中): 双极晶体管和形成具有背面接触的双极晶体管的方法
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Application No.: US11786018Application Date: 2007-04-09
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Publication No.: US07863644B1Publication Date: 2011-01-04
- Inventor: Visvamohan Yegnashankaran , Hengyang Lin
- Applicant: Visvamohan Yegnashankaran , Hengyang Lin
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Mark C. Pickering
- Main IPC: H01L27/082
- IPC: H01L27/082
Abstract:
NPN and PNP bipolar junction transistors are formed on a wafer in a fabrication process that eliminates the heavily-doped buried layers and the lightly-doped epitaxial layer by forming back side collector contacts that are electrically connected to an interconnect structure on the top side of the wafer with through-the-wafer contacts.
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