Invention Grant
- Patent Title: Field effect transistor
- Patent Title (中): 场效应晶体管
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Application No.: US11921854Application Date: 2006-06-12
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Publication No.: US07863648B2Publication Date: 2011-01-04
- Inventor: Hironobu Miyamoto , Yuji Ando , Yasuhiro Okamoto , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Akio Wakejima , Kensuke Kasahara , Yasuhiro Murase , Kohji Matsunaga , Katsumi Yamanoguchi , Hidenori Shimawaki
- Applicant: Hironobu Miyamoto , Yuji Ando , Yasuhiro Okamoto , Tatsuo Nakayama , Takashi Inoue , Kazuki Ota , Akio Wakejima , Kensuke Kasahara , Yasuhiro Murase , Kohji Matsunaga , Katsumi Yamanoguchi , Hidenori Shimawaki
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2005-171706 20050610
- International Application: PCT/JP2006/311745 WO 20060612
- International Announcement: WO2006/132418 WO 20061214
- Main IPC: H01L29/812
- IPC: H01L29/812 ; H01L21/338
Abstract:
A field effect transistor (100) exhibiting good performance at high voltage operation and high frequency includes a first field plate electrode (116) and a second field plate electrode (118). The second field plate electrode includes a shielding part (119) located in the region between the first field plate electrode and a drain electrode (114), and serves to shield the first field plate electrode from the drain electrode. When in the cross sectional view in the gate length direction, the length in the gate length direction of an overlap region where the second field plate electrode (118) overlap the upper part of a structure including the first field plate electrode and a gate electrode (113) is designated as Lol, and the gate length is Lg, the relation expressed as 0 ≦Lol/Lg≦1 holds.
Public/Granted literature
- US20090230429A1 Field effect transistor Public/Granted day:2009-09-17
Information query
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