Invention Grant
- Patent Title: Nitride semiconductor device and method for fabricating the same
- Patent Title (中): 氮化物半导体器件及其制造方法
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Application No.: US12331668Application Date: 2008-12-10
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Publication No.: US07863649B2Publication Date: 2011-01-04
- Inventor: Masahiro Hikita , Tetsuzo Ueda
- Applicant: Masahiro Hikita , Tetsuzo Ueda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-318058 20071210
- Main IPC: H01L29/739
- IPC: H01L29/739
Abstract:
A nitride semiconductor device includes: first through third nitride semiconductor layers formed in sequence over a substrate. The second nitride semiconductor layer has a band gap energy larger than that of the first nitride semiconductor layer. The third nitride semiconductor layer has an opening. A p-type fourth nitride semiconductor layer is formed so that the opening is filled therewith. A gate electrode is formed on the fourth nitride semiconductor layer.
Public/Granted literature
- US20090146182A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-06-11
Information query
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