Invention Grant
- Patent Title: Fin field effect transistor and method for forming the same
- Patent Title (中): Fin场效应晶体管及其形成方法
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Application No.: US11714160Application Date: 2007-03-06
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Publication No.: US07863683B2Publication Date: 2011-01-04
- Inventor: Keunnam Kim , Makoto Yoshida
- Applicant: Keunnam Kim , Makoto Yoshida
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0043169 20060513
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L27/12 ; H01L31/0392
Abstract:
Example embodiments are directed to a method of forming a field effect transistor (FET) and a field effect transistor (FET) including a source/drain pair that is elevated with respect to the corresponding gate structure.
Public/Granted literature
- US20070278576A1 Fin field effect transistor and method for forming the same Public/Granted day:2007-12-06
Information query
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