A trenched semiconductor power device that includes a plurality of trenched gates surrounded by source regions near a top surface of a semiconductor substrate encompassed in body regions. Each of the body regions extended between two adjacent trenched gates further having a gap exposing a top surface above an epitaxial layer above said semiconductor substrate. The trenched semiconductor power device further includes a Schottky junction barrier layer covering the top surface above the epitaxial layer between the trenched gate thus forming embedded Schottky diodes between adjacent trenched gates.