Invention Grant
- Patent Title: Semiconductor device having a bonding pad structure including an annular contact
- Patent Title (中): 具有包括环形触点的焊盘结构的半导体器件
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Application No.: US11285057Application Date: 2005-11-23
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Publication No.: US07863705B2Publication Date: 2011-01-04
- Inventor: Yasushi Yamazaki
- Applicant: Yasushi Yamazaki
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2004-357652 20041210
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L31/00
Abstract:
A bonding pad structure in a semiconductor device includes a contact pad connected to an interconnect, a bonding pad overlying the contact pad with an intervention of an insulating film and exposed from an opening of a passivation film, and an annular contact disposed between the contact pad and the bonding pad for electric connection therebetween. The annular contact encircles the opening as viewed normal to the substrate surface.
Public/Granted literature
- US20060125118A1 Semiconductor device having a bonding pad structure including an annular contact Public/Granted day:2006-06-15
Information query
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