Invention Grant
- Patent Title: DC-DC converter
- Patent Title (中): DC-DC转换器
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Application No.: US12121171Application Date: 2008-05-15
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Publication No.: US07863707B2Publication Date: 2011-01-04
- Inventor: Kazutoshi Nakamura
- Applicant: Kazutoshi Nakamura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-129063 20070515
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A semiconductor device includes, in one semiconductor substrate: a plurality of switching elements connected between a terminal of an input voltage and an inductor; a driver circuit connected to a gate electrode of the switching element and driving the switching element; a reference voltage line connected to a source electrode of the switching element; a power supply line of the driver circuit; and a capacitor connected between the power supply line and the reference voltage line.
Public/Granted literature
- US20080283965A1 SEMICONDUCTOR DEVICE Public/Granted day:2008-11-20
Information query
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