Invention Grant
US07863714B2 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same
有权
具有屏障的单片MEMS和集成电路器件及其制造方法
- Patent Title: Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same
- Patent Title (中): 具有屏障的单片MEMS和集成电路器件及其制造方法
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Application No.: US11446397Application Date: 2006-06-05
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Publication No.: US07863714B2Publication Date: 2011-01-04
- Inventor: Brett M. Diamond , Matthew A. Zeleznik
- Applicant: Brett M. Diamond , Matthew A. Zeleznik
- Applicant Address: US PA Pittsburgh
- Assignee: Akustica, Inc.
- Current Assignee: Akustica, Inc.
- Current Assignee Address: US PA Pittsburgh
- Agency: Kenyon & Kenyon LLP
- Main IPC: H01L23/552
- IPC: H01L23/552
Abstract:
An integrated circuit device includes a semiconductor die, the semiconductor die including a semiconductor substrate, driving/control circuitry disposed along a peripheral region of the semiconductor die, a MEMS device disposed within a central region of the semiconductor die, and a barrier disposed between the driving/control circuitry and the MEMS device.
Public/Granted literature
- US20080006889A1 Monolithic MEMS and integrated circuit device having a barrier and method of fabricating the same Public/Granted day:2008-01-10
Information query
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