Invention Grant
- Patent Title: Semiconductor device and signal terminating method thereof
- Patent Title (中): 半导体装置及其信号终端方法
-
Application No.: US12007322Application Date: 2008-01-09
-
Publication No.: US07863736B2Publication Date: 2011-01-04
- Inventor: Dae-Hyun Chung
- Applicant: Dae-Hyun Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0003829 20070112
- Main IPC: H01L23/50
- IPC: H01L23/50

Abstract:
A semiconductor device may include a semiconductor chip including a signal terminating resistor coupled between a signal input pad and a first ground voltage pad, a semiconductor package including a signal input terminal and a first ground voltage terminal, the signal input terminal being electrically coupled to the signal input pad of the semiconductor chip and the first ground voltage terminal being electrically coupled to the first ground voltage pad of the semiconductor chip, a capacitor and a resistor that are coupled between the signal input terminal and the first ground voltage terminal, and a first inductor realized by coupling the signal input terminal and the signal input pad.
Public/Granted literature
- US20080169536A1 Semiconductor device and signal terminating method thereof Public/Granted day:2008-07-17
Information query
IPC分类: