Invention Grant
- Patent Title: Semiconductor device, manufacturing method of the semiconductor device, and mounting method of the semiconductor device
- Patent Title (中): 半导体器件，半导体器件的制造方法以及半导体器件的安装方法
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Application No.: US11595854Application Date: 2006-11-13
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Publication No.: US07863745B2Publication Date: 2011-01-04
- Inventor: Ryuji Nomoto , Hirohisa Matsuki
- Applicant: Ryuji Nomoto , Hirohisa Matsuki
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-161128 20060609
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device, including a semiconductor substrate where a plurality of functional elements is formed; and a multilayer interconnection layer provided over the semiconductor substrate, the multilayer interconnection layer including a wiring layer mutually connecting the plural functional elements and including an interlayer insulation layer, wherein a region where the wiring layer is formed is surrounded by a groove forming part, the groove forming part piercing the multilayer interconnection layer; and the groove forming part is filled with an organic insulation material.
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