Invention Grant
- Patent Title: Bandgap voltage reference circuits and methods for producing bandgap voltages
- Patent Title (中): 带隙电压参考电路和产生带隙电压的方法
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Application No.: US11968551Application Date: 2008-01-02
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Publication No.: US07863882B2Publication Date: 2011-01-04
- Inventor: Barry Harvey
- Applicant: Barry Harvey
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fliesler Meyer LLP
- Main IPC: G05F3/16
- IPC: G05F3/16 ; G05F3/30

Abstract:
A bandgap voltage reference circuit includes a first circuit portion and a second circuit portion. The first circuit portion generates a voltage complimentary to absolute temperature (VCTAT). The second circuit portion generates a voltage proportional to absolute temperature (VPTAT) that is added to the VCTAT to produce a bandgap voltage reference output. The first circuit portion includes a plurality of delta base-emitter voltage (VBE) generators, connected as a plurality of stacks of delta VBE generators. Each delta VBE generator can include a pair of transistors that operate at different current densities and thereby generate a difference in base-emitter voltages (ΔVBE). The plurality of delta VBE generators within each stack are connected to one another, and the plurality of stacks of delta VBE generators are connected to one another, such that the ΔVBEs generated by the plurality of delta VBE generators are arithmetically added to produce the VPTAT.
Public/Granted literature
- US20090121698A1 BANDGAP VOLTAGE REFERENCE CIRCUITS AND METHODS FOR PRODUCING BANDGAP VOLTAGES Public/Granted day:2009-05-14
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