Invention Grant
- Patent Title: Evaluation method of insulating film and measurement circuit thereof
- Patent Title (中): 绝缘膜的评价方法及其测量电路
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Application No.: US12364008Application Date: 2009-02-02
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Publication No.: US07863922B2Publication Date: 2011-01-04
- Inventor: Kiyohiro Tsuru
- Applicant: Kiyohiro Tsuru
- Applicant Address: JP Chiba
- Assignee: Seiko Instruments Inc.
- Current Assignee: Seiko Instruments Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2008-027250 20080207
- Main IPC: G01R31/12
- IPC: G01R31/12

Abstract:
Provided is a method of evaluating dielectric breakdown by applying a current to an insulating film, in which measurement for a forward direction current and measurement for a backward direction current are performed in a short period of time. For this purpose two MOS diodes in which an electrode of one MOS diode and a base of another MOS diode are short-circuited respectively are prepared to form a circuit to which the current is applied, providing current flow in one insulating film reverse to current flow in another insulating film, which enables the application of both the forward direction current and the backward direction current.
Public/Granted literature
- US20090201028A1 EVALUATION METHOD OF INSULATING FILM AND MEASUREMENT CIRCUIT THEREOF Public/Granted day:2009-08-13
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