Invention Grant
- Patent Title: Level shifter for change of both high and low voltage
- Patent Title (中): 电平移位器用于改变高低电压
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Application No.: US12358859Application Date: 2009-01-23
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Publication No.: US07863963B2Publication Date: 2011-01-04
- Inventor: Shayan Zhang , Andrew C. Russell , Hector Sanchez
- Applicant: Shayan Zhang , Andrew C. Russell , Hector Sanchez
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; Daniel D. Hill
- Main IPC: H03L5/00
- IPC: H03L5/00

Abstract:
A circuit comprises first and second inverters, first, second, third, and fourth transistors, and an enabling circuit. The first and second inverters each have an input terminal for receiving one of the first or second input signals, an output terminal, and first and second supply terminals. The first transistor is coupled to a first power supply terminal, to the output terminal of the second inverter, and to the first inverter. The second transistor is coupled to the first power supply terminal, to the output terminal of the first inverter, and to the first supply terminal of the second inverter. The third and fourth transistor are coupled to the second supply terminals of the first and second inverters, respectively, and each includes a control electrode and a second current electrode. The enabling circuit is for controlling the third and fourth transistors to reduce a leakage current in the circuit.
Public/Granted literature
- US20100188131A1 LEVEL SHIFTER FOR CHANGE OF BOTH HIGH AND LOW VOLTAGE Public/Granted day:2010-07-29
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