Invention Grant
- Patent Title: High frequency switching circuit
- Patent Title (中): 高频开关电路
-
Application No.: US12271479Application Date: 2008-11-14
-
Publication No.: US07864000B2Publication Date: 2011-01-04
- Inventor: Norihisa Otani , Eiichiro Otobe
- Applicant: Norihisa Otani , Eiichiro Otobe
- Applicant Address: KR Suwon, Gyunggi-Do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon, Gyunggi-Do
- Agency: Lowe Hauptman Ham & Berner LLP
- Priority: JP2007-332353 20071225
- Main IPC: H01P1/10
- IPC: H01P1/10 ; H03H7/19

Abstract:
There is provided a high frequency switching circuit that can reduce generation of a harmonic signal without using a boost circuit. A high frequency switching circuit according to an aspect of the invention may include: a first switch having one end connected to a first port and the other end connected to a ground; a second switch having one end connected to a second port and the other end connected to the first port by a phase rotation element; and a control circuit controlling to turn off the first switch and turn on the second switch when a high frequency signal input to the first port is output through the second port, wherein the control circuit controls the off-state of the first switch so as to increase harmonics of the high frequency signal generated from the first switch, and the phase rotation element rotates the phase of the harmonics generated in the first switch within a frequency band of the harmonics, and cancels the phase-rotated harmonics generated from the first switch and harmonics generated from the second switch in opposite phases to each other.
Public/Granted literature
- US20090160264A1 HIGH FREQUENCY SWITCHING CIRCUIT Public/Granted day:2009-06-25
Information query