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US07864254B2 Electrostatic discharge protection element comprising top gate thin film transistors with an auxiliary electrode between an organic insulating layer and a gate electrode 有权
静电放电保护元件包括具有在有机绝缘层和栅电极之间的辅助电极的顶栅极薄膜晶体管

Electrostatic discharge protection element comprising top gate thin film transistors with an auxiliary electrode between an organic insulating layer and a gate electrode
Abstract:
An electrostatic discharge protection element, a liquid crystal display device having the same, and a manufacturing method. A first ESD organic TFT, a second ESD organic TFT, a third ESD organic TFT each have a gate electrode, a source electrode and a drain electrode in which the source electrode and drain electrode of the first and second ESD organic TFTs and the gate electrode of the third ESD organic TFT are electrically connected. The gate electrode and the source electrode of the first ESD organic TFT are electrically connected to a first array line and the gate electrode and the drain electrode of the second ESD organic TFT are electrically connected to a second array line. The source electrode of the third ESD organic TFT is electrically connected to a data line or a gate line and the drain of the third ESD organic TFT are electrically connected to a common voltage line.
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