Invention Grant
- Patent Title: Post-release adjustment of interferometric modulator reflectivity
- Patent Title (中): 干涉式调制器反射率的释放后调整
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Application No.: US12413452Application Date: 2009-03-27
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Publication No.: US07864403B2Publication Date: 2011-01-04
- Inventor: Ion Bita , Jeffrey B. Sampsell
- Applicant: Ion Bita , Jeffrey B. Sampsell
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee: Qualcomm Mems Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: G02B26/00
- IPC: G02B26/00

Abstract:
In various embodiments, devices, methods, and systems for adjusting the reflectivity spectrum of a microelectromechanical systems (MEMS) device are described herein. The method comprises depositing a reflectivity modifying layer with the optical cavity of an interferometric modulator, where the reflectivity modifying layer shifts or trims the shape of the interferometric modulator's wavelength reflectivity spectrum relative to the absence of the reflectivity modifying layer.
Public/Granted literature
- US20100245977A1 POST-RELEASE ADJUSTMENT OF INTERFEROMETRIC MODULATOR REFLECTIVITY Public/Granted day:2010-09-30
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