Invention Grant
- Patent Title: Load dump protection for power FET device
- Patent Title (中): 功率FET器件负载突降保护
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Application No.: US11949369Application Date: 2007-12-03
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Publication No.: US07864496B2Publication Date: 2011-01-04
- Inventor: John T. Wichlacz , Andi Gega , W. David Williams
- Applicant: John T. Wichlacz , Andi Gega , W. David Williams
- Applicant Address: US MI Holly
- Assignee: Magna Electronics
- Current Assignee: Magna Electronics
- Current Assignee Address: US MI Holly
- Agency: Van Dyke, Gardner, Linn & Burkhart, LLP
- Main IPC: H02H3/22
- IPC: H02H3/22

Abstract:
A load dump protection system is operable to provide protection for power transistors used to drive a blower motor of a vehicle. The load dump protection system includes circuitry for detecting an over-voltage transient. The circuitry adjusts a drive transistor into a saturation mode in response to a detection of an over-voltage transient. The circuitry lowers the power dissipated by the drive transistor when the drive transistor is in the saturation mode.
Public/Granted literature
- US20080130178A1 LOAD DUMP PROTECTION FOR POWER FET DEVICE Public/Granted day:2008-06-05
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