Invention Grant
US07864502B2 In situ monitoring of wafer charge distribution in plasma processing
有权
等离子体处理中晶片电荷分布的原位监测
- Patent Title: In situ monitoring of wafer charge distribution in plasma processing
- Patent Title (中): 等离子体处理中晶片电荷分布的原位监测
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Application No.: US11748560Application Date: 2007-05-15
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Publication No.: US07864502B2Publication Date: 2011-01-04
- Inventor: Kevin M Boyd , James A Gallo , Edward P Higgins , Mark L Reath , Barbara L Shiffler , Justin Wong
- Applicant: Kevin M Boyd , James A Gallo , Edward P Higgins , Mark L Reath , Barbara L Shiffler , Justin Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Joseph Petrokaitis
- Main IPC: H01T23/00
- IPC: H01T23/00 ; H01L21/683
Abstract:
A processing system and method. The processing system includes a processing tool, an electrostatic chuck (ESC) arranged within the processing tool, and a system that at least one of detects at least one of an ESC bias spike and an ESC current spike of the ESC and determines when an ESC bias voltage is zero or exceeds a threshold value. The method includes at least one of detecting at least one of an ESC bias spike and an ESC current spike of the ESC, and determining when an ESC bias voltage is zero or exceeds a threshold value. The system and method can be used in real time ESC and plasma processing diagnostics to minimize yield loss and wafer scrap.
Public/Granted literature
- US20080285202A1 IN SITU MONITORING OF WAFER CHARGE DISTRIBUTION IN PLASMA PROCESSING Public/Granted day:2008-11-20
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