A semiconductor memory device with an improved protection against soft errors includes a bi-stable flip-flop cell having a data storage node and a data bar storage node. A first capacitor electrically couples the data storage node to a predefined voltage and a second capacitor electrically couples the data bar storage node to the predefined voltage. Each one of the first and second capacitors includes a top conductive electrode overlying a bottom contact electrode with a dielectric layer disposed in-between. The bottom contact electrode overlays at least two different active regions forming the data and data bar storage nodes.