Invention Grant
US07864564B2 Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance 有权
具有改善的读干扰抑制和热干扰电阻的磁随机存取存储器

Magnetic random access memory having improved read disturb suppression and thermal disturbance resistance
Abstract:
Between the value of an electric current and the supply duration for which the electric current is supplied that cause magnetization reversal, there is the relation of monotonous decrease. This means that, as the supply duration is shortened, the threshold current value for causing the magnetization reversal is larger. Therefore, in terms of suppressing occurrence of read disturb, the read current supply duration may be shortened to increase the threshold value of the current causing the magnetization reversal and thereby ensure a sufficient read disturb margin. Therefore, the read current supply duration may be shortened relative to the write current supply duration ensure the read disturb margin and suppress occurrence of read disturb.
Information query
Patent Agency Ranking
0/0