Invention Grant
US07864569B2 Structure of magnetic random access memory using spin-torque transfer writing 有权
使用自旋扭矩传递写入的磁性随机存取存储器的结构

Structure of magnetic random access memory using spin-torque transfer writing
Abstract:
A nano-magnetic device includes a first hard magnet having a first magnetization direction and having a central axis. The device also includes a second hard magnet separated from the first hard magnet by a dielectric liner. The second hard magnet has a second magnetization direction opposite to the first magnetization direction of the first hard magnet, and a central axis, such that when the first hard magnet and the second hard magnet are aligned a closed magnetic flux loop is formed through the first and second hard magnets. The device additionally includes a ferromagnetic free layer having a central axis. A spin-torque transfer current passes along the central axes of the first and second hard magnets and the ferromagnetic free layer, and affects the magnetization direction of the ferromagnetic free layer.
Information query
Patent Agency Ranking
0/0