Invention Grant
US07864569B2 Structure of magnetic random access memory using spin-torque transfer writing
有权
使用自旋扭矩传递写入的磁性随机存取存储器的结构
- Patent Title: Structure of magnetic random access memory using spin-torque transfer writing
- Patent Title (中): 使用自旋扭矩传递写入的磁性随机存取存储器的结构
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Application No.: US11607612Application Date: 2006-12-01
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Publication No.: US07864569B2Publication Date: 2011-01-04
- Inventor: Chiahua Ho
- Applicant: Chiahua Ho
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: G11C11/14
- IPC: G11C11/14

Abstract:
A nano-magnetic device includes a first hard magnet having a first magnetization direction and having a central axis. The device also includes a second hard magnet separated from the first hard magnet by a dielectric liner. The second hard magnet has a second magnetization direction opposite to the first magnetization direction of the first hard magnet, and a central axis, such that when the first hard magnet and the second hard magnet are aligned a closed magnetic flux loop is formed through the first and second hard magnets. The device additionally includes a ferromagnetic free layer having a central axis. A spin-torque transfer current passes along the central axes of the first and second hard magnets and the ferromagnetic free layer, and affects the magnetization direction of the ferromagnetic free layer.
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