Invention Grant
US07864576B2 Nonvolatile memory cell array architecture for high speed reading
有权
非易失性存储单元阵列架构,用于高速读取
- Patent Title: Nonvolatile memory cell array architecture for high speed reading
- Patent Title (中): 非易失性存储单元阵列架构,用于高速读取
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Application No.: US11707130Application Date: 2007-02-16
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Publication No.: US07864576B2Publication Date: 2011-01-04
- Inventor: Osamu Iioka
- Applicant: Osamu Iioka
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
When different word lines are accessed sequentially, to perform access operations in parallel, a word decoder overlaps a part of activation periods of those word lines. That is, a nonvolatile semiconductor memory is capable of pipeline processing for performing access operations in parallel. All the combinations of bit lines and source lines that are connected to the drains and the sources of nonvolatile memory cells are different from each other. Therefore, even when plural word lines are activated to perform plural read operations in parallel, a memory cell current is allowed to flow only between the drain and the source of a nonvolatile memory cell concerned. As a result, random access in which desired nonvolatile memory cells are accessed sequentially is enabled in a nonvolatile semiconductor memory having a pipeline function for performing plural read operations in parallel.
Public/Granted literature
- US20070140039A1 Nonvolatile semiconductor memory Public/Granted day:2007-06-21
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