Invention Grant
US07864580B2 Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
有权
非易失性半导体存储装置,非易失性半导体存储系统以及非易失性半导体存储系统中的有缺陷的列的管理方法
- Patent Title: Nonvolatile semiconductor storage device, nonvolatile semiconductor storage system and method of managing of defective column in nonvolatile semiconductor storage system
- Patent Title (中): 非易失性半导体存储装置,非易失性半导体存储系统以及非易失性半导体存储系统中的有缺陷的列的管理方法
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Application No.: US12767847Application Date: 2010-04-27
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Publication No.: US07864580B2Publication Date: 2011-01-04
- Inventor: Naoya Tokiwa
- Applicant: Naoya Tokiwa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-053358 20070302
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04

Abstract:
A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside.
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