Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12153976Application Date: 2008-05-28
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Publication No.: US07864608B2Publication Date: 2011-01-04
- Inventor: Hiroyuki Takahashi
- Applicant: Hiroyuki Takahashi
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2007-141609 20070529
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device includes a DRAM cell configured to store a data; and a sense amplifier activated in response to supply of power supply voltages and configured to sense the data stored in the DRAM cell. A power supply circuit supplies the power supply voltages to the sense amplifier. A sense amplifier dummy circuit provides a replica of a state of the sense amplifier immediately after the activation of the sense amplifier; and a power supply control circuit controls the power supply circuit based on the replica such that the power supply voltages are varied with time.
Public/Granted literature
- US20080298150A1 Semiconductor device Public/Granted day:2008-12-04
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