Invention Grant
- Patent Title: Thermal code transmission circuit and semiconductor memory device using the same
- Patent Title (中): 热代码传输电路和半导体存储器件使用相同
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Application No.: US12156836Application Date: 2008-06-05
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Publication No.: US07864613B2Publication Date: 2011-01-04
- Inventor: Sun Mo An , Youk Hee Kim
- Applicant: Sun Mo An , Youk Hee Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2007-0141035 20071228
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C1/12

Abstract:
Disclosed are a thermal code transmission circuit and a semiconductor memory device using the same. The thermal code transmission circuit includes a select signal generator which generates a select signal in response to a first enable signal, a level signal generator which receives the first enable signal to generate a level signal, an update signal generator which receives the level signal and a first update signal to generate a second update signal, a latch unit which receives a thermal code in response to the second update signal and outputs the thermal code as an output thermal code, and a thermal code output unit which selectively outputs the output thermal code in response to the select signal.
Public/Granted literature
- US20090168589A1 Thermal code transmission circuit and semiconductor memory device using the same Public/Granted day:2009-07-02
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